Die package and method of forming a die package

ABSTRACT

A die package and method is disclosed. In one example, the die package includes a die having a first die contact on a first side and a second die contact on a second side opposite the first side, and insulating material laterally adjacent to the die. A metal structure substantially directly contacts the surface of the second die contact, wherein the metal structure is made of the same material as the second die contact. A first pad contact on the first side of the die electrically contacts the first die contact, and a second pad contact on the first side of the die electrically contacts the second die contact via the metal structure. The insulating material electrically insulates the metal structure from the first die contact.

CROSS-REFERENCE TO RELATED APPLICATION

This Utility Patent Application claims priority to German PatentApplication No. 10 2019 103 281.4, filed Feb. 11, 2019, which isincorporated herein by reference.

TECHNICAL FIELD

Various embodiments relate generally to a die package and to a method offorming a die package.

BACKGROUND

Cost and performance may be considered the two most relevant aspectsregarding discrete power packages. It is a typical challenge in aproduction of embedded chips how to manufacture a package that has thebest possible electrical and thermal performance at the lowest possiblecost. A good electrical performance may require a good electricallyconductive contact between the die and the package. Such contacts aretypically formed as expensive laser micro-vias and/or plated throughholes. A layout of a current CE 2nd generation 3×3 package may forexample include two layers on both sides of the die. Due to this, thethermal performance may not be very good, and especially themanufacturing cost may be high.

A current successor to the Blade 3×3 package may have a total of fourlayers and a high number of plated micro-vias and through holes. The diemay be located on a center line of the package, and a connection betweenboth sides of the die and the outer layers may be provided by platedmicro-vias, and due to this, the die back side may not be directlyexposed to the package top side. Limitations of the current package maybe a poor thermal performance and very high cost.

SUMMARY

A die package is provided. The die package may include a die having afirst die contact on a first side of the die and a second die contact ona second side of the die opposite the first side of the die, insulatingmaterial laterally adjacent to the die, a metal structure substantiallydirectly contacting the entire surface of the second die contact of thedie, wherein the metal structure is made of the same material as thesecond die contact, a first pad contact on the first side of the dieelectrically contacting the first die contact, and a second pad contacton the first side of the die electrically contacting the second diecontact via the metal structure, wherein the insulating materialelectrically insulates the metal structure from the first die contact.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. The drawings are not necessarilyto scale, emphasis instead generally being placed upon illustrating theprinciples of the invention. In the following description, variousembodiments of the invention are described with reference to thefollowing drawings, in which:

FIG. 1, including FIGS. 1A, 1B and 1C, illustrates schematic crosssections of three die packages in accordance with various embodiments;

FIG. 2, including FIGS. 2A, 2B, 2C, 2D, 2E, 2F and 2G, illustrates avisualization of a process of forming a die package in accordance withvarious embodiments; and

FIG. 3 illustrates a flow diagram of a method of forming a die package.

DESCRIPTION

The following detailed description refers to the accompanying drawingsthat show, by way of illustration, specific details and embodiments inwhich the invention may be practiced.

The word “exemplary” is used herein to mean “serving as an example,instance, or illustration”. Any embodiment or design described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments or designs.

The word “over” used with regards to a deposited material formed “over”a side or surface, may be used herein to mean that the depositedmaterial may be formed “directly on”, e.g. in direct contact with, theimplied side or surface. The word “over” used with regards to adeposited material formed “over” a side or surface, may be used hereinto mean that the deposited material may be formed “indirectly on” theimplied side or surface with one or more additional layers beingarranged between the implied side or surface and the deposited material.

In various embodiments, a method of forming a die package is providedthat has a process flow that is simplified and very low cost compared tothe existing one. The method allows skipping an expensive laser drillingprocess by using (e.g.) a plasma etching process and/or a water blastingprocess for forming one or more large area opening(s) to a front side ofa (semiconductor) die (also referred to as (semiconductor) chip). Abackside of the die opposite the front side of the die may be openeddirectly to a top side of the die package to guarantee the best possible(i.e. as low as possible) thermal resistance R_(TH) to the top.

In various embodiments, a simple non-symmetric laminate based diepackage is provided. The die package may include only one routing layer,and the die backside may be directly connected to the package top side.

FIG. 1 (including FIGS. 1A, 1B and 1C) shows schematic cross sections ofthree die packages 100 (for easy reference distinguished as 100 a, 100b, and 100 c) in accordance with various embodiments. FIG. 2 (includingFIGS. 2A, 2B, 2C, 2D, 2E, 2F and 2G) shows a visualization of a process200 of forming a die package in accordance with various embodiments.FIG. 3 shows a flow diagram 300 of a method of forming a die package inaccordance with various embodiments.

As shown in FIG. 1, each of the die packages 100 (100 a, 100 b, 100 c)may include a die 102, e.g. a semiconductor die, e.g. a silicon die. Thedie 102 may have a first die contact 102C1 on a first side S1 of the die102, and a second die contact 102C2 on a second side S2 of the die 102opposite the first side S1 of the die 102.

The die 102 may for example form a diode, e.g. a power diode. In thatcase, the first die contact 102C1 may be an anode of the diode, and thesecond die contact 102C2 may be a cathode of the diode, or vice versa.

In various embodiments, for example in a case of the die 102 forming atransistor, e.g. a power transistor, the die 102 may further include athird die contact 102C3 on the first side S1 of the die 102. The thirddie contact 102C3 may for example be a controlling terminal of thetransistor; and the first die contact 102C1 and the second die contact102C2 may be controlled terminals of the transistor.

The first die contact 102C1, the second die contact 102C2, and, ifpresent, the third die contact, may be made of same material.

In various embodiments, the die package 100 may be a power semiconductordevice.

The die package 100 may further include insulating material 110laterally adjacent to the die 102. The insulating material 110 may bearranged laterally adjacent to the semiconductor die, and also laterallyadjacent to the first die contact 102C1, to the second die contact102C2, and, if present, to the third die contact 102C3. The insulatingmaterial 110 may for example include or consist of an epoxy resin, withour without (e.g. anorganic) filler particles or reinforcement, orinclude or consist of other suitable insulating material.

The insulating material 110 may in various embodiments be arranged inthe die package 100 as a foil, e.g. a resin foil (e.g. AjinomotoBuild-up Film (ABF) or similar resin foil, e.g. as used in PCB andsubstrate industry, for example a foil with or without filler particles(e.g. provided by Hitachi etc.) that may be laminated over and aroundthe die 102. In various embodiments, the insulating material, e.g. theresin, may be printed, molded, etc.

In a case of the third die contact 102C3 being present, furtherinsulating material 114 may be arranged between the first die contact102C1 and the third die contact 102C3 electrically insulating the firstdie contact 102C1 and the third die contact 102C3 from each other. Invarious embodiments, a material of the insulating material 110 and ofthe further insulating material 114 may be identical or similar. Invarious embodiments, the insulating material 110 and the furtherinsulating material 110 may be arranged in a common process, e.g. asdescribed below.

The die package 100 may further include a metal structure 106substantially directly contacting the entire surface (e.g. the entiretop surface that is facing away from the semiconductor material of thedie) of the second die contact 102C2 of the die 102. As an alternativeway of putting it, the metal structure 106 may substantially directlycontact the surface of the second die contact 102 of the die 102, andthe surface of the second die contact 102C2 may be free from insulatingmaterial.

The metal structure 106 may be made of the same material as the seconddie contact 102C2. The material of the metal structure 106 and of thesecond die contact 102C2 may for example include or consist of copper,an aluminum-copper-alloy, a nickel-copper-alloy, or copper platedaluminum. In the cross-sectional schematic view of FIG. 1 showing thedie package 100 a, a dashed line indicates a contact region between thesecond die contact 102C2 and the metal structure 106. In the diepackages 100 b and 100 c, this line is not added, but the contact regionwould be in a similar location.

In various embodiments, a homogeneous combined structure may be formed,in which the second die contact 102C2 and the metal structure 106 havethe same coefficient of thermal expansion (CTE), such that theconnection between the second die contact 102C2 and the metal structure106 has a high robustness with respect to temperature changes, e.g.thermal cycling. Furthermore, by directly contacting the entire surfaceof the second die contact 102C2 with the metal structure 106, a thermalresistance R_(TH) between the second die contact 102C2 and air (or,e.g., a cooling fluid, cooling structure and/or cooling device, whichmay be provided at an outer surface (i.e., opposite the die) of themetal structure 106) may be low. Details on how the metal structure 106is formed are provided further below in context with FIG. 2.

In various embodiments, the die package 100 may include pad contacts108P for contacting the die 102 from outside the die package 102. Thedie package 100 may for example include, on the first side S1 of thedie, a first pad contact 108P1, which may electrically contact the firstdie contact 102C1. This means that the first pad contact 108P1 may be onthe same side of the die 102 as the first die contact 102C1.

The die package 100 may further include a second pad contact 108P2electrically contacting the second die contact 102C2 via the metalstructure 106. The second pad contact 108P2 may also be arranged on thefirst side S1 of the die 102.

Optionally, e.g. in a case of the die package 100 forming a transistor,the die package 100 may further include a third pad contact 108P3electrically contacting the third die contact 108C3. The third padcontact 108P3 may be arranged on the first side S1 of the die 102.

This means that all pad contacts 108P may be arranged on the same(first) side S1 of the die 102. The pad contacts 108 (108P1, 108P2,108P3) may all be arranged on the same main surface of the die package100, which may also be referred to as a front surface of the die package100.

In various embodiments, the third die contact 102C3 and the thirdcontact pad 108P3 may be made of same material as the second die contact102C2 and the metal structure 106.

In various embodiments, the insulating material 110 may electricallyinsulate the metal structure 106 from the first die contact 102C1. Ifthe third die contact 102C3 is present, the insulating material 110 mayinsulate the third die contact 102C3 from the metal structure 106.

In various embodiments, the die package 100 may optionally furtherinclude a carrier 104 laterally surrounding the die 102. Even thoughFIG. 1 and FIG. 2 only show schematic cross-sectional views, it may beunderstood that the carrier 104 may surround the die 102 from all sides.For example, the carrier 104 may include a through-hole 222 (see FIG. 2)in which the die 102 is arranged. The insulating material 110 may bearranged between the die 102 and the carrier 110. The insulatingmaterial 110 may in various embodiments fulfill an additional functionof fixing the die 102 to the carrier 104. The insulating material 110may for example be an adhesive and/or may be shaped in such a way thatthe die 102 is held in place.

The carrier 104 may have a plurality of through-holes 222, such that aplurality of dies 102 may be arranged in the through-holes 222, one die102 per through-hole 222. This may serve as a basis for a plurality ofdie packages 100, which may be identical to or different from eachother. In other words, a multi-die-package (shown in FIG. 2) including aplurality of die packages 100 may be formed, which may be singulatedinto a plurality of individual die packages 100 during a later process,as will be described in context with FIG. 2.

In various embodiments, the die package 100 may include a metalconnection structure 112 electrically connecting the metal structure 106and the second pad contact 108P2. In other words, the metal connectionstructure 112 may include or consist of metal, and may be in directcontact with the metal structure 106 and with the second pad contact108P2. In the schematic cross-sectional view of FIG. 1 showing the diepackage 100 a, two dashed lines indicate a contact region between themetal structure 106 and the metal connection structure 112. In the diepackages 100 b and 100 c, no corresponding lines are added, but thecontact region would be in a similar location.

The metal connection structure 112 may in various embodiments include orconsist of the same material as the metal structure 106 and/or as thesecond chip contact 102C2.

The metal connection structure 112 may in various embodiments be part ofthe carrier 104.

The carrier 104 may for example include an electrically insulating bulkmaterial, and the metal connection structure 112 may extend throughand/or along the electrically insulating bulk material. For example, theinsulating bulk material may include or consist of a printed circuitboard (PCB), e.g. a PCB laminate, a flame retardant (FR) material (e.g.,FR4), a composite epoxy material (CEM), such as CEM1 or CEM3, aBismaleimide-Triazine resin (BT) material, imide, polyimide, ABF, ormade of a combination of the aforementioned exemplary materials. Theinsulating bulk material may for example be formed as a monolithicstructure, or as a multi-layered structure.

The metal connection structure 112 may for example be arranged along(e.g. all) inner side walls of the through-hole 222, and may extend atleast partially to main surfaces of the carrier 104. Such an embodimentof a die package 100 a is shown in FIG. 1 at the top, with the carrier104, 104 a having the metal connection structure 112 formed on innerside walls of the through hole 222, and on both main surfaces (i.e., ona first side S1 of the carrier 104, 104 a and on a second side S2 of thecarrier 104, 104 a) in connection with the portion formed on the innerside walls of the through hole 222. The metal connection structure 112may for example be formed as a metal layer. A thickness of the metallayer may be in a range from about 5 μm to about 30 μm, e.g. from about10 μm to about 20 μm, e.g. around 15 μm. The metal layer may have athickness of at least 10 μm, e.g. between 10 μm and 100 μm. In thatcase, the metal layer may be able to conduct a current havingapproximately 20 to 30 amperes. For larger currents, plated throughholes filled with metal (see FIG. 1, middle) or a carrier 104, 104 bconsisting or essentially consisting of metal, e.g. a leadframe (seeFIG. 1, bottom), may be used. If only smaller currents are foreseen, themetal layer with the thickness below 10 μm and/or plated vias ormicro-vias through the carrier 104 (not shown) may be used as the metalconnection structure 112.

In various embodiments, as shown in FIG. 1, middle, for the exemplarydie package 104 b, the metal connection structure 112 may be a metalblock, e.g. a copper block, extending completely through the insulatingbulk material from a first side S1 of the carrier 104 to a second sideS2 of the carrier 104 opposite the first side S1 of the carrier 104. Thecarrier 104, 104 a may be or include a PCB, for example.

In various embodiments, the carrier 104, 104 b may include a metal bulkmaterial, wherein the metal bulk material may form a metal connectionstructure 112 providing an electrical connection between the second diecontact 102C2 and the metal structure 106. The metal bulk material maybe the same as the material of the metal structure 106, e.g. copper, analuminum-copper-alloy, a nickel-copper-alloy, or copper plated aluminum.

The metal structure 106 may in various embodiments extend laterally tothe carrier 104 for contacting the metal connection structure 112. Inother words, the metal structure 106 may overlap the carrier 104 atleast far enough for directly contacting the metal connection structure112.

In the embodiments shown in FIG. 1, the metal structure 106 extends(laterally) completely over the die 102, over the insulating material110, and over a large fraction of the carrier 104. In particular, themetal structure 106 extends over the complete die backside metallization102C2, which may typically be structured and approximately 20 to 100 μmsmaller than a semiconductor (e.g. silicon) bulk material of the die 102(a dicing process used for dicing a semiconductor wafer into individualdies 102 is easier if only the semiconductor material is diced, hencethe metal structure is typically not formed or removed in the dicingareas).

In the die package 100 a illustrated in FIG. 1A, with the metalconnection structure 112 only arranged on an outside of the insulatingbulk material of the carrier 104, 104 a, the metal structure 106 is indirect contact with a portion of the metal connection structure 112 thatis arranged on one of the main surfaces of the carrier 104 and that hasa surface that is in the same plane as the main surface of the seconddie contact 102C2.

In the die package 100 b illustrated in FIG. 1B, with the metalconnection structure 112 extending through and being arranged on anoutside of the insulating bulk material of the carrier 104, 104 a, themetal structure 106 is in direct contact with a portion of the metalconnection structure 112 that is arranged on one of the main surfaces ofthe carrier 104 and that has a surface that is in the same plane as themain surface of the second die contact 102C2.

In the die package 100 c illustrated in FIG. 1C, with the metal bulkmaterial of the carrier 104, 104 b forming the metal connectionstructure 112, the metal structure 106 is in direct contact with thecarrier 104, 104 b. An outer surface of the carrier 104, 104 b is in thesame plane as the main surface of the second die contact 102C2.

In FIG. 2 (including FIGS. 2A, 2B, 2C, 2D, 2E, 2F and 2G), a process 200of forming a die package 100 in accordance with various embodiments isshown. Considering the carrier 104, 104 a used, it is the die package100, 100 a that is formed in FIG. 2. However, the processes applied arethe same or essentially the same for the die packages 100 a, 100 b and100 c, only the carrier 104 (and, respectively, a pre-processing of thecarrier 104, if applicable) may differ for the different embodiments. Asa consequence, when referring to, e.g., the metal connection structure112 of FIG. 2, only the reference number 112 is used. But it is to beunderstood that the described process applies generally also toembodiments in which a different carrier, e.g. as shown in FIG. 1, isused, and hence the metal connection structure 112 includes also theplated through-hole 116, or is formed by the metal carrier 104 b.

The die 102 that may be included in the die package 100, 100 b may havea first die contact 102C1 on a first side S1 of the die 102 and a seconddie contact 102C2 on a second side S2 of the die 102 opposite the firstside S1 of the die 102.

The process flow is very simple and it starts with manufacturing thecarrier 104 (also referred to as core layer) in which the die 102 willbe embedded. In various embodiments, the method may include providingthe carrier 104 having at least one through-hole 222, for example aplurality of through-holes 222.

The carrier 104, 104 a shown in panel 200 a of FIG. 2A may be aninsulating carrier 104, 104 a having a metal layer forming a metalconnection structure 112 arranged on its outside, as described incontext with FIG. 1 (top). The carrier 104 may for example be a simpletwo-sided PCB board. As an alternative to the carrier 104 a, aninsulating carrier 104 a that has a metal connection structure 112extending from one main surface of the carrier 104 a to an opposite mainsurface of the carrier 104 a through the carrier 104 a, e.g. asdescribed above in context with FIG. 1 (middle) may be used, or acarrier 104 b consisting or essentially consisting of metal, e.g. acopper leadframe of structured Cu sheet/foil, thus with the wholecarrier 104 b forming the metal connection structure 104 b, 112, e.g. asdescribed above in context with FIG. 1 (bottom). In various embodiments,combinations or variations of the above described carriers 104 may beused.

The carrier 104, irrespective of the type of carrier 104, may beprovided with openings or cavities 222 for the dies 102. Since it may beimportant that the opening(s) extend all the way through the carrier104, such that the first die contact 102C1 is exposed on the first sideS1 of the carrier 104, and the second die contact 102C2 is exposed onthe second side S2 of the carrier 104, the openings/cavities 222 may bereferred to as through-holes 222.

Connections, i.e. the metal connection structure 112 from the first (inFIG. 2A top) side S1 of the carrier 104, e.g. the two-sided PCB board104 a) to the second (in FIG. 2A bottom) side S2 may for example bemanufactured as plated through holes, plated through-hole (cavity)edges, or plated slots for example.

The plurality of through-holes 222 may be arranged in the carrier 104 asa linear or two-dimensional array of through-holes 222, for example in amatrix-like fashion. In panel 200 a of FIG. 2A, a cross-sectionalschematic view of a carrier 104 having the plurality of through-holes222 is shown. A shape of the at least one through-hole 222 in ahorizontal plane of the carrier 104 may be rectangular, e.g. quadratic,ellipsoidal, e.g. round, or any other suitable shape. For example, theshape of the at least one through-hole 222 may be adjusted to the die102 to be arranged inside the through-hole 222, for example in such away that the through-hole 222 is larger than a horizontaltwo-dimensional size of the die 102. For example in such a way that adistance between side walls of the carrier 104 in the through-hole 222and the die 102 arranged in the through-hole 222 is constant oressentially constant for all the side walls. The size of thethrough-hole 222 may for example be configured to allow a distancebetween each die side wall and its opposite through-hole side wall to befor example in a range from about 5 μm to about 500 μm, e.g. from about10 μm to about 100 μm.

In various embodiments, as shown in panel 200 b, the method may furtherinclude arranging at least one die 102 in the at least one through-hole222. In other words, the at least one die 102 may be arranged in thethrough-hole 222 of the carrier 104 in such a way that the carrier 104laterally surrounds the die 102.

In various embodiments, one die 102 may be arranged in each through-hole222, i.e. one die 102 in one through-hole 222, or a plurality of dies102 in a plurality of through-holes 222, with one die 102 perthrough-hole 222. In various embodiments, more than one die 102 may bearranged per through-hole 222, for example two dies 102 may be arrangedin a single through-hole 222, both with the second die contact 102C2facing the same side S2.

As further shown in FIG. 2B, panel 200 b, before the arranging the die102 in the through-hole 222, the carrier 104 may be arranged on atemporary carrier 220. The temporary carrier 220 may for example includea supporting layer 220U and an adhesive layer 220A. The carrier 104 maybe placed on the temporary carrier 220 in contact with the adhesivelayer 220A, e.g. an adhesive tape. The carrier 104 may be placed on thetemporary carrier 220 in such a way that a metal surface 112S2 of themetal connection structure 112, which is part of or formed by thecarrier 104, is in direct contact with the temporary carrier 220.

The at least one die 102 may be placed inside the through-hole(s) (e.g.as described above) on the temporary carrier 220. The die 102 may beplaced on the temporary carrier 220 with the second die contact 102C2contacting the temporary carrier 220 (for example the adhesive layer220A of the temporary carrier 220). For a precise positioning, aligningmarks on the temporary carrier 220 may be used.

By placing both the carrier 104 with its metal surface 112S2 and the die102 with its second die contact 102C2 on the temporary carrier 220, itmay be ensured that, after a removal of the temporary carrier 220 (to bedescribed below) the metal surface 112S2 and a metal surface of thesecond die contact 102C2 are at the same level (i.e., form a commonplane), and that the insulating material arranged laterally adjacent tothe die 102, e.g. between the die 102 and the carrier 104, may neitherextend to the metal surface 112S2 of the metal structure 112 nor to thesurface of the second die contact 102C2, which may be beneficial for thearranging of the metal structure 106.

The method may further include, after the die 102 placement, arranginginsulating material 110 laterally adjacent to the die 102. An example ofthis is shown in panel 200 c of FIG. 2C. The insulating material 110 mayfor example be arranged laterally around the die 102 on all sides. Theinsulating material 110 may for example be arranged between the die 102and the carrier 104, e.g. laterally on all sides of the die 102.

In the embodiment shown in panel 200 c of FIG. 2C, the insulatingmaterial 110 may be arranged by laminating a resin foil (with the resinforming the insulating material 110) with a Cu seed layer 222 on to thefirst side S1 (the top side) of the die(s) 102 and of the carrier 104.The resin foil can for example be ABF (or a similar type of foil e.g.from Hitachi), or other resin foils with or without filler particles orreinforcement, or for example resin coated copper (RCC) foil. During thelaminating, the insulating material (e.g. the resin) may be pressedaround the die 102, e.g. into the space between the die 102 and thecarrier 104.

Instead of lamination, the insulating material 110, e.g. the resin, mayfor example be printed, molded, etc., and the seed layer 222 may forexample be sputtered (e.g. using a process that is typically used for anembedded wafer level ball grid array (eWLB)) or formed by an electrolessplating process. The seed layer 222 may also be referred to as a furthermetal layer 222.

In various embodiments, for example as shown in panel 200 c of FIG. 2C,the insulating material 110 may not only be arranged laterally adjacentto the die 102, but also on the first side S1 of the die 102 and also onthe first side S1 of the carrier 104, in such a way that the first diecontact 102C1 is electrically insulated from the third die contact102C3, and both are electrically insulated from the metal connectionstructure 112.

In various embodiments, the seed layer 222 may be structured, therebyforming a structured seed layer 222S. This is shown in panel 200 d ofFIG. 2D. For the example lithography and etching may be used to removestructuring, for the seed layer 222, e.g. the copper, from the areas 224where the contact pads 108P to the die 102 may be manufactured. This maybe areas 224 over the first die contact 102C1 and, if present, over thethird die contact 102C3, and also areas 224 over the metal surface 112S1of the metal connection structure 112 of the carrier 104, through whichthe second die contact 102C2 may be contacted.

On the second side S2, the temporary carrier 220 may be removed, forexample by exposing the temporary carrier 220 to UV radiation, and/or byheating the temporary carrier 220, or by other suitable means. Thereby,the second die contact 102C2 and a second surface 11252 of the metalconnection structure 112 may be exposed, as is also shown in panel 200 dof FIG. 2D.

After the structuring of the seed layer 222 to form the structured seedlayer 222S, the opening, i.e. the exposing of the first (andrespectively the third) die contact 102C1, 102C3 may be done by removingthe insulating material 110 in regions 226 below the areas 224. This isshown in panel 200 e of FIG. 2E. For this process, for example plasmaprocessing, water blasting or laser processing may be used, for exampleby using the structured seed layer 222S, e.g. the structured copper seedlayer, as a mask. In various embodiments, the structuring of the seedlayer 222 may be skipped, and the die contacts 102C1, 102C3 may forexample be laser-drilled directly. In various embodiments, the formingof the seed layer 222 may be skipped (or moved to a later stage). Inthat case, for example, a mask, e.g. a metal mask, may be used incombination with a plasma process to remove the insulating material 110.The seed layer 222 and/or an electroless plating layer 108P may be addedthereafter. In case a photodefinable resin system (e.g. by Hitachi) isused, as an alternative, a photolithography process and developmentprocess may be used.

After the opening process, two metal layers 228S1, 228S2 (togetherreferred to as the metal layers 228; they may for example consisting ofor include copper (Cu), or, more generally, the same metal that isincluded in the second die contact 102S2, or, if that is a layeredstructure, the metal exposed on the surface of the second die contact102S2) may be formed, one on each side, S1 and S2, respectively, of thecarrier-die-combination. For this, a sputtering process or anelectroless process and/or an electrochemical process, e.g. plating, maybe used. Typically, a combination of sputtering and an electrochemicalprocess or a combination of an electroless process and anelectrochemical process may be used. The process is shown in panel 200 fof FIG. 2F. In case the electrochemical process is used, the (e.g.copper) seed layer 222 may be used as the seed layer for theelectrochemical plating process on the first side S1.

The bottom metal layer 228S2 may be a metal structure 106 thatsubstantially directly contacts the entire surface of the second diecontact 102C2 of the die 102. The metal layer 228S2 (and hence the metalstructure 106) may laterally extend to the carrier 104 to contact themetal connection structure 112, thereby forming an electricallyconductive connection between the second die contact 102C2 and the metalconnection structure 112, and thus to the first (front) side S1 of thecarrier-die-combination.

The top metal layer 228S1 may form the first pad contact 108P1 on thefirst side S1 of the die 102 electrically contacting the first diecontact 102C1. If the third die contact 102C3 is present, the top metallayer 22851 may also form the third pad contact 108P3 on the first sideS1 of the die 102 electrically contacting the third die contact 102C3.Furthermore, the top metal layer 22851 may form the second pad contact108P2 on the first side S1 of the die 102, which may electricallycontact the second die contact 102C2 via the metal structure 106 (andvia the metal connection structure 112).

With the first pad contact 10851 and the second pad contact 10852arranged on the same side S1, the first pad contact 10851 and the secondpad contact 10852 (and, if present, also the third pad contact 10853)may be formed in a common process. Using the plating process (or anyprocess that acts on the top and the bottom side at the same time), thetop metal layer 22851 forming the pad contacts 10851, 10852, 10853 andthe bottom metal layer 228S2 forming the metal structure 106 may beformed in a common process.

In various embodiments, as shown in panel 200 g of FIG. 2G, the metallayers 228S1, 228S2 may be structured for electrically insulating themetal structure 106 from the first die contact 102C1 and from the thirddie contact 102C3, and for insulating the first die contact 102C1 fromthe third die contact 102C3, or, generally speaking, for electricallyinsulating the die contacts 102C1 and 102C2 (and, if present, 102C3)from each other. For this, their respective contact pads 108, i.e. thefirst contact pad 108P1 and the second contact pad 108P2 (and, ifpresent, the third contact pad 108P3) may be electrically insulated fromeach other. The electrical insulation may be achieved by formingopenings 232 in the top metal layer 228S1 that extend all the way downto the insulating material 110. In the horizontal plane, the openings232 may form a closed ring (not necessarily round; they may have anyshape that closes on itself, like a closed ring-shaped rectangularopening) or may connect two positions on an edge of the metal layer228S1, or may have any other shape that allows to electrically insulatethe contact pads 108P1, 108P2, 108P3 from each other.

Openings 232 may furthermore be arranged at positions on the top (first)side S1 and on the bottom (second) side S2 that are foreseen for aseparating (e.g. dicing) of the carrier-die-combination, which forms amulti-package, into a plurality of individual die packages 100 a. Forthe structuring, common processes like photolithographic and etchingprocesses may be used. For example, in a case of the plating beingperformed as a pattern plating process, i.e. plating inside a photomask,the seed layer 222 that may be present in the dicing area (also referredto as dicing street or kerf region) and/or between the contact pads maybe removed by etching. For the dicing, common processes like sawing orlaser processing may be used.

In various embodiments, a manufacturing process and a structure tomanufacture simplified low cost and high performance laminate basedpower packages is provided.

FIG. 3 shows a flow diagram 300 of a method of forming a die package.The die package may include a die having a first die contact on a firstside of the die and a second die contact on a second side of the dieopposite the first side of the die. The method may include arranginginsulating material laterally adjacent to the die (in 310),substantially directly contacting the entire surface of the second diecontact of the die with a metal structure, wherein the metal structureis made of the same material as the second die contact (in 320), forminga first pad contact on the first side of the die electrically contactingthe first die contact (in 330), and forming a second pad contact on thefirst side of the die electrically contacting the second die contact viathe metal structure, wherein the insulating material electricallyinsulates the metal structure from the first die contact (in 340).

Various examples will be illustrated in the following:

Example 1 is a die package. The die package may include a die having afirst die contact on a first side of the die and a second die contact ona second side of the die opposite the first side of the die, insulatingmaterial laterally adjacent to the die, a metal structure substantiallydirectly contacting the entire surface of the second die contact of thedie, wherein the metal structure is made of the same material as thesecond die contact, a first pad contact on the first side of the dieelectrically contacting the first die contact, and a second pad contacton the first side of the die electrically contacting the second diecontact via the metal structure, wherein the insulating materialelectrically insulates the metal structure from the first die contact.

Example 2 is a die package. The die package may include a die having afirst die contact on a first side of the die and a second die contact ona second side of the die opposite the first side of the die, insulatingmaterial laterally adjacent to the die, a metal structure substantiallydirectly contacting the surface of the second die contact of the die,wherein the surface of the second die contact is free from insulatingmaterial, and wherein the metal structure is made of the same materialas the first die contact, a first pad contact on the first side of thedie electrically contacting the first die contact, and a second padcontact on the first side of the die electrically contacting the seconddie contact via the metal structure, wherein the insulating materialelectrically insulates the metal structure from the first die contact.

In Example 3, the subject-matter of Example 1 or 2 may optionallyfurther include a carrier laterally surrounding the die.

In Example 4, the subject matter of Example 3 may further include thatthe carrier includes a through-hole in which the die is arranged.

In Example 5, the subject-matter of Example 3 or 4 may optionallyinclude that the metal structure laterally extends to the carrier.

In Example 6, the subject-matter of any of Examples 3 to 5 mayoptionally include that the carrier includes an electrically insulatingbulk material and a metal connection structure extending through and/oralong the electrically insulating bulk material, wherein the metalconnection structure provides an electrical connection between thesecond die contact and the metal structure.

In Example 7, the subject matter of Example 6 may optionally includethat the carrier is a printed circuit board.

In Example 8, the subject matter of Example 4 and 6 may optionallyinclude that the metal connection structure is formed on at least oneinner side wall of the through-hole.

In Example 9, the subject matter of Example 8 may optionally includethat the metal connection structure is formed on all inner side walls ofthe through-hole.

In Example 10, the subject matter of Example 8 or 9 may optionallyinclude that the metal connection structure has a thickness of at least10 μm, optionally between 10 μm and 100 μm.

In Example 11, the subject matter of Example 6 or 7 may optionallyinclude that the metal connection structure is a via, optionally amicro-via.

In Example 12, the subject matter of Example 6 or 7 may optionallyinclude that the metal connection structure is a metal block extendingcompletely through the insulating bulk material from a first side of thecarrier to a second side of the carrier opposite the first side of thecarrier.

In Example 13, the subject matter of any of Examples 6 to 12 mayoptionally include that the metal connection structure is made of thesame material as the metal structure.

In Example 14, the subject-matter of any of Examples 3 to 5 mayoptionally include that the carrier includes a metal bulk material,wherein the metal bulk material forms a metal connection structureproviding an electrical connection between the second die contact andthe metal structure.

In Example 15, the subject matter of Example 13 may optionally includethat the carrier is a lead frame.

In Example 16, the subject matter of Example 14 or 15 may optionallyinclude that the metal bulk material is the same as the material of themetal structure.

In Example 17, the subject matter of any of the preceding Examples mayoptionally include that the die forms a diode, wherein the first diecontact is an anode of the diode and the second die contact is a cathodeof the diode, or vice versa.

In Example 18, the subject matter of any of the preceding Examples mayoptionally include a third die contact on the first side of the die, anda third pad contact on the first side of the die electrically contactingthe third die contact, wherein the insulating material electricallyinsulates the metal structure from the third die contact.

In Example 19, the subject matter of Example 18 may optionally furtherinclude further insulating material insulating the first pad contactfrom the third pad contact.

In Example 20, the subject matter of Example 18 or 19 may optionallyinclude that the die forms a transistor, wherein the third die contactis a controlling terminal of the transistor; and wherein the first diecontact and the second die contact are controlled terminals of thetransistor.

In Example 21, the subject matter of any of the previous Examples mayoptionally include that the material of the metal structure and of thesecond die contact is at least one of a group of materials, the groupconsisting of: copper, an aluminum-copper-alloy, a nickel-copper-alloy,and copper plated aluminum.

In Example 22, the subject matter any of Examples 18 to 21 mayoptionally include that the third die contact and the third contact padare made of same material as the second die contact and the metalstructure.

In Example 23, the subject matter of any of the previous Examples mayoptionally include that the die package is a power semiconductor device.

Example 24 is a method of forming a die package. The die package mayinclude a die having a first die contact on a first side of the die anda second die contact on a second side of the die opposite the first sideof the die, and the method may include arranging insulating materiallaterally adjacent to the die, substantially directly contacting theentire surface of the second die contact of the die with a metalstructure, wherein the metal structure is made of the same material asthe second die contact, forming a first pad contact on the first side ofthe die electrically contacting the first die contact, and forming asecond pad contact on the first side of the die electrically contactingthe second die contact via the metal structure, wherein the insulatingmaterial electrically insulates the metal structure from the first diecontact.

In Example 25, the subject matter of Example 24 may optionally furtherinclude, before the arranging of the insulating material, arranging acarrier having a through-hole such that it laterally surrounds the die.

In Example 26, the subject matter of Example 25 may optionally furtherinclude arranging the die on a temporary carrier, wherein the die isplaced on the temporary carrier with the second die contact contactingthe temporary carrier, wherein the arranging the carrier includesarranging the carrier on the temporary carrier, wherein the carrier isplaced on the temporary carrier with a metal surface of the carriercontacting the temporary carrier.

In Example 27, the subject matter of Example 26 may optionally furtherinclude, before the substantially directly contacting the entire surfaceof the second die contact of the die with a metal structure, removingthe temporary carrier, wherein the substantially directly contacting theentire surface of the second die contact of the die with a metalstructure includes forming a metal layer on the second die contact,wherein the metal layer laterally extends to the carrier.

In Example 28, the subject matter of Example 27 may optionally includethat the forming the metal layer includes electroless or electrochemicalplating.

In Example 29, the subject matter of Example 27 or 28 may optionallyinclude that the first pad contact and the second pad contact includemetal, and that the forming the metal layer and an arranging of themetal for the forming of the first pad contact and the forming of thesecond pad contact are performed in a common process.

In Example 30, the subject matter of any of Examples 24 to 29 mayoptionally include that the arranging the insulating material laterallyadjacent to the die includes laminating, printing or molding theinsulating material.

In Example 31, the subject matter of any of Examples 24 to 30 mayoptionally further include arranging a further metal layer over theinsulating material.

In Example 32, the subject matter of Example 31 may optionally includethat the arranging the further metal layer over the insulating materialincludes sputtering.

In Example 33, the subject matter of Examples 30 and 31 may optionallyinclude that the insulating material and the further metal layer arearranged in a common process of laminating a foil including theinsulating material and the further metal layer onto the die, such thatthe insulating material is arranged laterally adjacent to the die.

In Example 34, the subject matter of any of Examples 30 to 33 mayoptionally include that the metal of the metal foil forms a seed layerfor a plating process for the forming the first pad contact and theforming the second pad contact.

In Example 35, the subject matter of Example 26 in combination with anyof Examples 31 to 34 may optionally include at least partially removingthe further metal layer and the insulating material over the first diecontact and over the metal surface of the carrier, such that the firstdie contact and the metal surface of the carrier, respectively, are atleast partially exposed.

In Example 36, the subject matter of Example 35 may optionally includethat the at least partially removing the further metal layer includesphotolithographic structuring.

In Example 37, the subject matter of Example 35 or 36 may optionallyinclude that the at least partially removing the insulating materialincludes laser or plasma structuring and/or water blasting using thefurther metal layer as a mask.

In Example 38, the subject matter of any of Examples 24 to 37 mayoptionally include that the forming the first contact pad and theforming the second contact pad include photolithographic structuring.

In Example 38, the subject matter of any of Examples 24 to 37 mayoptionally include that the carrier and the die are part of amulti-package, the multi-package including a plurality of integrallyformed die packages, the method further including separating theplurality of integrally formed die packages into a plurality ofindividual die packages.

In Example 39, the subject matter of Example 38 may optionally includethat the separating includes dicing.

While the invention has been particularly shown and described withreference to specific embodiments, it should be understood by thoseskilled in the art that various changes in form and detail may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims. The scope of the invention is thusindicated by the appended claims and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced.

What is claimed is:
 1. A die package, comprising: a die having a firstdie contact on a first side of the die and a second die contact on asecond side of the die opposite the first side of the die; insulatingmaterial laterally adjacent to the die; a metal structure substantiallydirectly contacting an entire surface of the second die contact of thedie, wherein the metal structure is made of the same material as thesecond die contact, and wherein an outer surface of the metal structurefacing away from the second die contact on the second side of the die isexposed; a first pad contact on the first side of the die electricallycontacting the first die contact; a second pad contact on the first sideof the die electrically contacting the second die contact via the metalstructure, the first pad contact and second pad contact exposed at anexterior of the die package; and a carrier laterally surrounding thedie; wherein the insulating material electrically insulates the metalstructure from the first die contact.
 2. The die package of claim 1,wherein the metal structure laterally extends to the carrier.
 3. The diepackage of claim 1, wherein the carrier comprises an electricallyinsulating bulk material, a portion of the metal structure extendingthrough and/or along the electrically insulating bulk material.
 4. Thedie package of claim 1, wherein the die forms a diode; and wherein thefirst die contact is an anode of the diode and the second die contact isa cathode of the diode, or vice versa.
 5. The die package of claim 1,further comprising: a third die contact on the first side of the die;and a third pad contact on the first side of the die electricallycontacting the third die contact; wherein the insulating materialelectrically insulates the metal structure from the third die contact.6. The die package of claim 5, wherein the die forms a transistor;wherein the third die contact is a controlling terminal of thetransistor; and wherein the first die contact and the second die contactare controlled terminals of the transistor.
 7. The die package of claim1, wherein the material of the metal structure and of the second diecontact is at least one of a group of materials, the group consistingof: copper; an aluminum-copper-alloy; a nickel-copper-alloy; and copperplated aluminum.
 8. The die package of claim 1, wherein the die packageis a power semiconductor device.
 9. The die package of claim 1, whereinthe insulating material fixes the die to the carrier laterally.
 10. Adie package, comprising: a die having a first die contact on a firstside of the die and a second die contact on a second side of the dieopposite the first side of the die; insulating material laterallyadjacent to the die; a carrier laterally surrounding the die; a metalstructure substantially directly contacting a surface of the second diecontact of the die, wherein the surface of the second die contact isfree from insulating material, wherein the metal structure is made ofthe same material as the first die contact, and wherein on the secondside of the die an outer surface of the metal structure facing away fromthe second die contact is exposed; a first pad contact on the first sideof the die electrically contacting the first die contact; a second padcontact on the first side of the die electrically contacting the seconddie contact via the metal structure, the first pad contact and secondpad contact exposed at an exterior of the die package; wherein theinsulating material electrically insulates the metal structure from thefirst die contact.
 11. A die package, comprising: a die having a firstdie contact on a first side of the die and a second die contact on asecond side of the die opposite the first side of the die; insulatingmaterial laterally adjacent to the die; a metal structure substantiallydirectly contacting an entire surface of the second die contact of thedie, wherein the metal structure is made of the same material as thesecond die contact; a first pad contact on the first side of the dieelectrically contacting the first die contact; a second pad contact onthe first side of the die electrically contacting the second die contactvia the metal structure; and a carrier laterally surrounding the die;wherein the insulating material electrically insulates the metalstructure from the first die contact; and wherein the carrier comprisesa metal bulk material and forms a portion of the metal structure.
 12. Amethod of forming a die package comprising a die having a first diecontact on a first side of the die and a second die contact on a secondside of the die opposite the first side of the die; the methodcomprising: arranging insulating material laterally adjacent to the die;before the arranging of the insulating material, arranging a carrierhaving a through-hole such that it laterally surrounds the die;substantially directly contacting the entire surface of the second diecontact of the die with a metal structure, wherein the metal structureis made of the same material as the second die contact; forming a firstpad contact on the first side of the die electrically contacting thefirst die contact; and forming a second pad contact on the first side ofthe die electrically contacting the second die contact via the metalstructure; wherein the insulating material electrically insulates themetal structure from the first die contact; and arranging the die on atemporary carrier, wherein the die is placed on the temporary carrierwith the second die contact contacting the temporary carrier; whereinthe arranging the carrier comprises: arranging the carrier on thetemporary carrier, including placing the carrier on the temporarycarrier with a metal surface of the carrier contacting the temporarycarrier.
 13. The method of claim 12, further comprising: before thesubstantially directly contacting the entire surface of the second diecontact of the die with a metal structure, removing the temporarycarrier; wherein the substantially directly contacting the entiresurface of the second die contact of the die with a metal structurecomprises forming a metal layer on the second die contact, wherein themetal layer laterally extends to the carrier.
 14. The method of claim13, wherein the forming the metal layer comprises electroless orelectrochemical plating.
 15. The method of claim 13, wherein the firstpad contact and the second pad contact include metal, and wherein theforming the metal layer and an arranging of the metal for the forming ofthe first pad contact and the forming of the second pad contact areperformed in a common process.
 16. The method of claim 12, wherein thearranging the insulating material laterally adjacent to the diecomprises laminating, printing or molding the insulating material. 17.The method of claim 12, wherein the carrier and the die are part of amulti-package, the multi-package comprising a plurality of integrallyformed die packages, the method further comprising: separating theplurality of integrally formed die packages into a plurality ofindividual die packages.
 18. A method of forming a die packagecomprising a die having a first die contact on a first side of the dieand a second die contact on a second side of the die opposite the firstside of the die; the method comprising: arranging insulating materiallaterally adjacent to the die; substantially directly contacting theentire surface of the second die contact of the die with a metalstructure, wherein the metal structure is made of the same material asthe second die contact; forming a first pad contact on the first side ofthe die electrically contacting the first die contact; forming a secondpad contact on the first side of the die electrically contacting thesecond die contact via the metal structure; and arranging a furthermetal layer over the insulating material wherein the insulating materialelectrically insulates the metal structure from the first die contact,and wherein the insulating material and the further metal layer arearranged in a common process of laminating a foil comprising theinsulating material and the further metal layer onto the die, such thatthe insulating material is arranged laterally adjacent to the die. 19.The method of claim 18, wherein the metal of the metal foil forms a seedlayer for a plating process for the forming the first pad contact andthe forming the second pad contact.